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题名: The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering
作者: Zhou BQ;  Liu FZ;  Zhu MF;  Gu JH;  Zhou YQ;  Liu JL;  Dong BZ;  Li GH;  Ding K
发表日期: 2005
摘要: The microstructures of hydrogenated microcrystalline silicon (tic-Si: H) thin films, prepared by plasma-enhanced chemical vapor deposition (PECVD), hot wire CVD(HWCVD) and plasma assisted HWCVD (PE-HWCVD), have been analyzed by the small angle x-ray scattering(SAXS) measurement. The SAXS data show that the microstructures of the μ c-Si: H films display different characteristics for different deposition techniques. For films deposited by PECVD, the volume fraction of micro-voids and mean size are smaller than those in HWCVD sample. Aided by suitable ion-bombardment, PE-HWCVD samples show a more compact structure than the HWCVD sample. The microstructure parameters of the μ c-Si: H thin films deposited by two-steps HWCVD and PE-HWCVD with Ar ions are evidently improved. The result of 45° tilting SAXS measurement indicates that the distribution of micro-voids in the film is anisotropic. The Fouriertransform infrared spectra confirm the SAXS data.
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhou, BQ; Liu, FZ; Zhu, MF; Gu, JH; Zhou, YQ; Liu, JL; Dong, BZ; Li, GH; Ding, K .The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering ,ACTA PHYSICA SINICA,MAY 2005,54 (5):2172-2175
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