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题名: Electrical characterization of Er- and Pr-implanted GaN films
作者: Song SF;  Chen WD;  Zhang CG;  Bian LF;  Hsu CC;  Lu LW;  Zhang YH;  Zhu JJ
发表日期: 2005
摘要: Hall, current-voltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. However, four defect levels located at 0.300, 0.188, 0.600, and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280, 0.190, 0.610, and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30 min. The origins of the deep defect levels are discussed. (C) 2005 American Institute of Physics.
KOS主题词: Defects
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Song, SF; Chen, WD; Zhang, CG; Bian, LF; Hsu, CC; Lu, LW; Zhang, YH; Zhu, JJ .Electrical characterization of Er- and Pr-implanted GaN films ,APPLIED PHYSICS LETTERS,APR 11 2005,86 (15):Art.No.152111
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