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题名: Impact of hydrogen dilution on microstructure and optoelectronic properties of silicon films deposited using tirisilane
作者: Du WH;  Yang XS;  Povolny H;  Liao XB;  Deng XM
发表日期: 2005
摘要: We explored the deposition of hydrogenated amorphous silicon (a-Si: H) using trisilane (Si3H8) as a gas precursor in a radiofrequency plasma enhanced chemical vapour deposition process and studied the suitability of this material for photovoltaic applications. The impact of hydrogen dilution on the deposition rate and microstructure of the films is systematically examined. Materials deposited using trisilane are compared with that using disilane (Si2H6). It is found that when using Si3H8 as the gas precursor the deposition rate increases by a factor of similar to 1.5 for the same hydrogen dilution (R = [H-2]/[Si3H8] or [H-2]/[Si2H6])- Moreover, the structural transition from amorphous to nanocrystalline occurs at a higher hydrogen dilution level for Si3H8 and the transition is more gradual as compared with Si2H6 deposited films. Single-junction n-i-p a-Si: H solar cells were prepared with intrinsic layers deposited using Si3H8 or Si2H6. The dependence of open circuit voltage (V-oc) on hydrogen dilution was investigated. V-oc greater than 1 V can be obtained when the i-layers are deposited at a hydrogen dilution of 180 and 100 using Si3H8 and Si2H6, respectively.
KOS主题词: amorphous silicon
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Du, WH; Yang, XS; Povolny, H; Liao, XB; Deng, XM .Impact of hydrogen dilution on microstructure and optoelectronic properties of silicon films deposited using tirisilane ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,MAR 21 2005,38 (6):838-842
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