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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition
作者: Wu JJ;  Han XX;  Li JM;  Li DB;  Lu Y;  Wei HY;  Cong GW;  Liu XL;  Zhu QS;  Wang ZG
发表日期: 2005
摘要: A new method is demonstrated to be effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks by inserting InAlGaN interlayers during the growth of GaN upon Si (1 1 1) substrate. Compared with GaN film without quaternary interlayer, GaN layer grown on InAlGaN compliant layers shows a five times brighter integrated PL intensity and a (0 0 0 2) High-resolution X-ray diffraction (HRXRD) curve width of 18 arcmin. Its chi(min), derived from Rutherford backscattering spectrometry (RBS), is about 2.0%, which means that the crystalline quality of this layer is very good. Quaternary InAlGaN layers, which are used as buffer layers firstly, can play a compliant role to endure the large mismatch-induced stress and reduce cracks during the growth of GaN epitaxy. The mechanisms leading to crack density reduction are investigated and results show that the phase immiscibility and the weak In-N bond make interlayer to offer tenability in the lattice parameters and release the thermal stress. (c) 2005 Elsevier B.V. All rights reserved.
KOS主题词: Cracking;  crack-edge stress field analysis;  Stress corrosion
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wu, JJ; Han, XX; Li, JM; Li, DB; Lu, Y; Wei, HY; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG .Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition ,JOURNAL OF CRYSTAL GROWTH,JUN 1 2005,279 (3-4):335-340
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