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题名: Photoluminescence of large-sized InAs/GaAs quantum dots under hydrostatic pressure
作者: Ma BS;  Wang XD;  Luo JW;  Su FH;  Fang ZL;  Ding K;  Niu ZC;  Li GH
发表日期: 2005
摘要: The photoluminescence of self-assembled InAs/GaAs quantum dots, which are 7.3nm in height and 78nm in base size, was investigated at 15K under hydrostatic pressures up to 9GPa. The emissions from both the ground and the first excited states in large InAs dots were observed. The pressure coefficients of the two emissions are 69 and 72 meV/GPa respectively, which are lower than those of small InAs/GaAs dots. The analysis based on a nonlinear elasticity theory reveals that the small pressure coefficients mainly result from the changes of the misfit strain and the elastic constants with pressure. The pressure experiments suggest that the excited state emissions originate from the optical transitions between the first excited electron states and the first excited hole states.
KOS主题词: Condensed-matter physics
刊名: JOURNAL OF INFRARED AND MILLIMETER WAVES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Ma, BS; Wang, XD; Luo, JW; Su, FH; Fang, ZL; Ding, K; Niu, ZC; Li, GH .Photoluminescence of large-sized InAs/GaAs quantum dots under hydrostatic pressure ,JOURNAL OF INFRARED AND MILLIMETER WAVES,JUN 2005,24 (3):207-212
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