高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Investigations on optical properties of AlGaInN epilayers grown by mocvd
作者: Jiang DS;  Liu JP;  Yang H
发表日期: 2005
摘要: Microscopic luminescence and Raman scattering study was carried on AIInGaN quaternary alloy. Based on the analyses of SEM image and cathodoluminescence spectra measured around V-defects, the correlation between V-defect formation and indium segregation was clarified. Raman scattering of thin AlInGaN epilayers was investigated by using the short wavelength excitation of 325nm laser line. The frequency shift of A(1)(LO) phonon induced by the change of Al composition in alloy was observed. The Raman scattering of LO phonons was found to be resonantly enhanced with outgoing resonance, and it is attributed to the cascade-like electron-multiphonon interaction mechanism.
KOS主题词: Nitrides
刊名: JOURNAL OF INFRARED AND MILLIMETER WAVES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
2616.pdf407KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Jiang, DS; Liu, JP; Yang, H .Investigations on optical properties of AlGaInN epilayers grown by mocvd ,JOURNAL OF INFRARED AND MILLIMETER WAVES,JUN 2005,24 (3):193-197
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Jiang DS]的文章
 [Liu JP]的文章
 [Yang H]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Jiang DS]的文章
 [Liu JP]的文章
 [Yang H]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发