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题名: Optical properties and exciton localization in GaNas/GaAs
作者: Luo XD;  Xu ZY;  Tan PH;  Ge WK
发表日期: 2005
摘要: GaNAs/GaAs single quantum wells (SQWs) and dilute GaNAs bulk grown by molecular beam epitaxy(MBE) were studied by photoluminescence (PL), selectively-excited PL, and time-resolved PL. Exciton localization and delocalization were investigated in detail. Under short pulse laser excitation, the delocalization exciton emission was revealed in GaNAs/GaAs SQWs. It exhibits quite different optical properties from N-related localized states. In dilute GaNAs bulk, a transition of alloy band related recombination was observed by measuring the PL dependence on temperature and excitation intensity and time-resolved PL, as well. This alloy-related transition presents intrinsic optical properties. These results are very important for realizing the abnomal features of III-V-N semiconductors.
刊名: JOURNAL OF INFRARED AND MILLIMETER WAVES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Luo, XD; Xu, ZY; Tan, PH; Ge, WK .Optical properties and exciton localization in GaNas/GaAs ,JOURNAL OF INFRARED AND MILLIMETER WAVES,JUN 2005,24 (3):185-188
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