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题名: Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts
作者: Luo Q;  Du JF;  Yang MH;  Wang LC;  Jin T;  Yu Q
发表日期: 2005
摘要: A new measurement method for GaN films and their Schottky contacts is reported in this paper. Instead of the fabrication of Ohmic contacts, this measurement is based on a special back-to-back Schottky diode that has a rectifying character. A mathematical model indicates that the electronic parameters of the materials can be deduced from the device's I-V data. In the experiment of an unintentionally doped n-type GaN layer with a residual carrier density 7 x 10(16) cm(-3), the analysis by the new method gives the layer's sheet resistance rho(s) = 497 Omega, the electron mobility mu(n) =, 613 cm(2) V-1 s(-1) and the ideality factor of the Ni/Au-GaN Schottky contacts n = 2.5, which are close to the data obtained by the traditional measurements: rho(s) = 505 Omega, mu(n) = 585 cm(2) V-1 s(-1) and n = 3.0. The method reported can be adopted not only for GaN films but also for other semiconductor materials, especially in the cases where Ohmic contacts of high quality are hard to make or their fabricating process affects the film's character.
KOS主题词: Ohmic contacts
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Luo, Q; Du, JF; Yang, MH; Wang, LC; Jin, T; Yu, Q .Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,JUN 2005,20 (6):606-610
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