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题名: Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation
作者: Zheng ZS;  Liu ZL;  Zhang GQ;  Li N;  Li GH;  Ma HZ;  Zhang EX;  Zhang ZX;  Wang X
发表日期: 2005
摘要: An investigation of hardening the buried oxides (BOX) in separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers to total-dose irradiation has been made by implanting nitrogen into the BOX layers with a constant dose at different implantation energies. The total-dose radiation hardness of the BOX layers is characterized by the high frequency capacitance-voltage (C-V) technique. The experimental results show that the implantation of nitrogen into the BOX layers can increase the BOX hardness to total-dose irradiation. Particularly, the implantation energy of nitrogen ions plays an important role in improving the radiation hardness of the BOX layers. The optimized implantation energy being used for a nitrogen dose, the hardness of BOX can be considerably improved. In addition, the C-V results show that there are differences between the BOX capacitances due to the different nitrogen implantation energies.
KOS主题词: Oxides
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zheng, ZS; Liu, ZL; Zhang, GQ; Li, N; Li, GH; Ma, HZ; Zhang, EX; Zhang, ZX; Wang, X .Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,JUN 2005,20 (6):481-484
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