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题名: Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation
作者: Sun, MH;  Zhao, TX;  Jia, CY;  Xu, PS;  Lu, ED;  Hsu, CC;  Ji, H
发表日期: 2005
摘要: The adsorption of K on the n-GaAs(I 0 0) surface was investigated by X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoemission spectroscopy (SR-PES). The Ga3d and As3d core level was measured for clean and K adsorbed GaAs(I 0 0) surface. The adsorption of K induced chemical reaction between K and As, and the K-As reactant formed when the K coverage theta > I ML. The chemical reaction between K and Ga did not occur, but Ga atoms were exchanged by K atoms. From the data of band bending, the Schottky barrier is 0.70 eV. The Fermi-level pinning was not caused by defect levels. The probable reason is that the dangling bonds of surface Ga atoms were filled by the outer-shell electrons of K atoms, forming a half-filled surface state. The Fermi-level pinning was caused by this half-filled surface state. (c) 2004 Elsevier B.V. All rights reserved.
KOS主题词: Photoelectron spectroscopy;  X-ray photoelectron spectroscopy
刊名: APPLIED SURFACE SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun, MH; Zhao, TX; Jia, CY; Xu, PS; Lu, ED; Hsu, CC; Ji, H .Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(100) interface with synchrotron radiation ,APPLIED SURFACE SCIENCE,AUG 15 2005,249 (1-4):340-345
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