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题名: Frequency dependence of junction capacitance of GaN p-i-n UV detectors
作者: Kang Y;  Xu YH;  Zhao DG;  Fang, JX
发表日期: 2005
摘要: In this paper frequency dependence of small-signal capacitance of p-i-n UV detectors, which were fabricated on GaN grown on sapphire substrate by metalorganic chemical vapor deposition, has been studied. The Schibli-Milnes model was used to analyze the capacitance-frequency characteristics. According to high frequency C-V measurements, the deep level mean concentration is about 2.98 x 10(20) cm(-3). The deep level is caused by the un-ionised Mg dopant. The calculated Mg activation energy is 260 meV and the hole thermal capture cross section of the deep level is about 2.73 x 10(-22) cm(2). The applicability of the Schibli-Milnes model is also discussed when the concentration of deep levels exceeds that of the heavily doped n-side. It is concluded that the analytic expression of the Schibli-Milnes model can still be used to describe the capacitance-frequency characteristics of GaN p-i-n UV detectors in good agreement with experiment. (c) 2005 Elsevier Ltd. All rights reserved.
刊名: SOLID-STATE ELECTRONICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Kang, Y; Xu, YH; Zhao, DG; Fang, JX .Frequency dependence of junction capacitance of GaN p-i-n UV detectors ,SOLID-STATE ELECTRONICS,JUL 2005,49 (7):1135-1139
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