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题名: Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation
作者: Zhang XW;  Yin H;  Boyen HG;  Ziemann P;  Ozawa M
发表日期: 2005
摘要: To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar+ ions over a large fluence range up to 2 x 10(16) cm(-2). Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp(2)-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 x 10(15) cm(-2). This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment. (c) 2005 Elsevier B.V. All rights reserved.
刊名: DIAMOND AND RELATED MATERIALS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, XW; Yin, H; Boyen, HG; Ziemann, P; Ozawa, M .Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation ,DIAMOND AND RELATED MATERIALS,SEP 2005,14 (9):1482-1488
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