高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance
作者: Qu, YH;  Jiang, D;  Wu, DH;  Niu, ZC;  Sun, Z
发表日期: 2005
摘要: Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples grown by Sb incorporation and Sb pre-deposition methods display high room-temperature photoluminescence (PL) intensity at extended long wavelength. This result is explained by the surfactant effects of Sb during the growth of GaInAs/GaAs QW systems. An abnormal S-shaped temperature dependence of the PL peak position is found in the In0.42Ga0.58As/GaAs triple QWs sample grown with Sb pre-deposition. By investigating the transmission electron microscope images and time-resolved PL spectra, it is found that the S-shaped temperature dependence of the PL peak position originates from the exciton localization effect brought by the Sb-rich clusters on the QW interface.
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
2588.pdf415KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Qu, YH; Jiang, D; Wu, DH; Niu, ZC; Sun, Z .Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance ,CHINESE PHYSICS LETTERS,AUG 2005,22 (8):2088-2091
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Qu, YH]的文章
 [Jiang, D]的文章
 [Wu, DH]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Qu, YH]的文章
 [Jiang, D]的文章
 [Wu, DH]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发