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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: A 10-GHz bandwidth electroabsorption modulated laser by ultra-low-pressure selective area growth
作者: Zhao, Q;  Pan, JQ;  Zhou, F;  Wang, BJ;  Wang, LF;  Wang, W
发表日期: 2005
摘要: A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multi-quantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30 mu m). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19 mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.
KOS主题词: atomic layer deposition
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhao, Q; Pan, JQ; Zhou, F; Wang, BJ; Wang, LF; Wang, W .A 10-GHz bandwidth electroabsorption modulated laser by ultra-low-pressure selective area growth ,CHINESE PHYSICS LETTERS,AUG 2005,22 (8):2016-2019
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