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题名: Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates
作者: Wang XL;  Wang CM;  Hu GX;  Wang JX;  Chen TS;  Jiao G;  Li JP;  Zeng YP;  Li JM
发表日期: 2005
摘要: High-quality AlGaN/GaN high electron mobility transistor (HEMT) structures were grown by metalorganic chemical vapor deposition (MOCVD) on 2-in. sapphire substrates. Two-dimensional electron gas (2DEG) mobility of 1410 cm(2)/Vs and concentration of 1.0X10(13) CM-2 are obtained at 295 K from the HEMT structures, whose average sheet resistance and sheet resistance uniformity are measured to be about 395 Omega/sq and 96.65% on 2-in. wafers, respectively. AlGaN/GaN HEMTs with 0.8 mu m gate length and 0.2 mm gate width were fabricated and characterized using the grown HEMT structures. Maximum current density of 0.9 A/ mm, peak extrinsic transconductance of 290 mS/mm, unity cutoff frequency (f(T)) of 20 GHz and maximum oscillation frequency (f(max) of 46 GHz are achieved. These results represent significant improvements over the previously fabricated devices with the same gate length, which are attributed to the improved performances of the MOCVD-grown HEMT structures. (c) 2005 Elsevier Ltd. All rights reserved.
KOS主题词: Modulation-doped field-effect transistors
刊名: SOLID-STATE ELECTRONICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang, XL; Wang, CM; Hu, GX; Wang, JX; Chen, TS; Jiao, G; Li, JP; Zeng, YP; Li, JM .Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates ,SOLID-STATE ELECTRONICS,AUG 2005,49 (8):1387-1390
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