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题名: High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy
作者: Zhang SY;  Niu ZC;  Ni HQ;  Wu DH;  He ZH;  Sun Z;  Han Q;  Wu RH
发表日期: 2005
摘要: High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. The cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content QWs. The room-temperature photoluminescence peak intensity of the GaIn0.425NAs/GaAs (6 nm/20 nm) 3QW is higher than, and the full width at half maximum is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality caused by strain compensation effect of introducing N to the high indium content InGaAs epilayer. (C) 2005 American Institute of Physics.
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, SY; Niu, ZC; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RH .High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy ,APPLIED PHYSICS LETTERS,OCT 17 2005,87 (16):Art.No.161911
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