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题名: 1.3 mu m InAs/GaAs self-assembled quantum dots grown on In0.2Ga0.8As-GaAs combined strain-buffer layer
作者: Fang ZD;  Gong Z;  Miao ZH;  Niu ZC;  Shen GD
发表日期: 2005
摘要: Optical properties and surface structures of InAs/CaAs self-assembled quantum dots (QDs) grown on 2 nm In-0.2 Ga0.8As and x ML GaAs combined strain-buffer layer were investigated systematically by photoluminescence ( PL) and atomic force microscopy (AFM). The QD density increased from similar to 1.7 x 10(9) cm(-2) to similar to 3.8 x 10(9) cm(-1) due to the decreasing of the lattice mismatch. The combined layer was of benefit to increasing In incorporated into dots and the average height-to-width ratios, which resulted in the red-shift of the emission peaks. For the sample of x = 10 ML, the ground state transition is shifted to 1350 nm at room temperature.
刊名: JOURNAL OF INFRARED AND MILLIMETER WAVES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Fang, ZD; Gong, Z; Miao, ZH; Niu, ZC; Shen, GD .1.3 mu m InAs/GaAs self-assembled quantum dots grown on In0.2Ga0.8As-GaAs combined strain-buffer layer ,JOURNAL OF INFRARED AND MILLIMETER WAVES,OCT 2005,24 (5):324-327
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