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题名: Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE
作者: Feng W;  Wang W;  Zhu HL;  Zhao LJ;  Hou LP;  Pan JQ
发表日期: 2005
摘要: Narrow stripe selective MOVPE has been used to grow high quality oxide-free InGaAlAs layers on an InP substrate patterned with SiO2 masks at optimized growth conditions. Mirror-like surface morphologies and abrupt cross sections are obtained in all samples without spike growth at the mask edge. For the narrow stripe selectively grown InGaAlAs layers with a mesa width of about 1.2 mu m, a bandgap wavelength shift of 70 nm, a photoluminescence (PL) intensity of more than 80% and a PL full width at half maximum (FWHM) of less than 60 meV are obtained simultaneously with a small mask width variation from 0 to 40 mu m. The characteristics of the thickness enhancement ratio and the PL spectrum dependence on the mask width are presented and explained by considering both the migration effect from a masked region and the lateral vapour diffusion effect.
KOS主题词: Vapor phase epitaxy
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Feng, W; Wang, W; Zhu, HL; Zhao, LJ; Hou, LP; Pan, JQ .Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,OCT 2005,20 (10):1083-1086
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