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题名: The compact microcrystalline Si thin film with structure uniformity in the growth direction by hydrogen dilution profile
作者: Gu J;  Zhu MF;  Wang LJ;  Liu FZ;  Zhou BQ;  Zhou YQ;  Ding K;  Li GH
发表日期: 2005
摘要: The hydrogen dilution profiling (HDP) technique has been developed to improve the quality and the crystalline uniformity in the growth direction of mu c-Si:H thin films prepared by hot-wire chemical-vapor deposition. The high H dilution in the initial growth stage reduces the amorphous transition layer from 30-50 to less than 10 nm. The uniformity of crystalline content X-c in the growth direction was much improved by the proper design of hydrogen dilution profiling which effectively controls the nonuniform transition region of Xc from 300 to less than 30 nm. Furthermore, the HDP approach restrains the formation of microvoids in mu c-Si: H thin films with a high Xc and enhances the compactness of the film. As a result the stability of mu c-Si: H thin films by HDP against the oxygen diffusion, as well as the electrical property, is much improved. (c) 2005 American Institute of Physics.
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Gu, J; Zhu, MF; Wang, LJ; Liu, FZ; Zhou, BQ; Zhou, YQ; Ding, K; Li, GH .The compact microcrystalline Si thin film with structure uniformity in the growth direction by hydrogen dilution profile ,JOURNAL OF APPLIED PHYSICS,NOV 1 2005,98 (9):Art.No.093505
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