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题名: Experimental observation of resonant modes in GaInAsP microsquare resonators
作者: Huang YZ;  Chen Q;  Guo WH;  Yu LJ
发表日期: 2005
摘要: GaInAsP-InP microsquare resonators with InP pedestals are fabricated by two-step chemical etching, and obvious mode peaks are observed in the photoluminescence spectra of the resonators. The mode Q-factors about 500 are obtained for a microsquare resonator with the side length of 7 mu m. The experimental mode interval is in agreement with that predicted by the light ray method based on the cavity length, instead of that of the whispering-gallery (WG)-like modes, which has mode interval twice of that determined by the cavity length. The finite-difference time-domain simulation shows that a little asymmetry may greatly reduce the difference of the Q-factors between the WG-like modes and the other modes.
刊名: IEEE PHOTONICS TECHNOLOGY LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Huang, YZ; Chen, Q; Guo, WH; Yu, LJ .Experimental observation of resonant modes in GaInAsP microsquare resonators ,IEEE PHOTONICS TECHNOLOGY LETTERS,DEC 2005,17 (12):2589-2591
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