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题名: Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowiires
作者: Dai L;  Liu SF;  You LP;  Zhang JC;  Qin GG
发表日期: 2005
摘要: GaN nanowires have been grown with and without In as an additional source. The effects of In surfactant on the crystal quality and photoluminescence property of GaN nanowires are reported for the first time. X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy, and photoluminescence measurements are employed to analyse the products. The results show that introducing a certain amount of In surfactant during the growth process can improve the crystal quality of the GaN nanowires, and enhance the photolurainescence of them. In addition, the as-prepared GaN nanowires have the advantage of being easy to be separated, which will benefit the subsequent nanodevice fabrication.
刊名: JOURNAL OF PHYSICS-CONDENSED MATTER
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Dai, L; Liu, SF; You, LP; Zhang, JC; Qin, GG .Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowiires ,JOURNAL OF PHYSICS-CONDENSED MATTER,NOV 2 2005,17 (43):L445-L449
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