Combined transparent electrodes for high power GaN-based LEDs with long life time
Wang, LC; Yi, XY; Wang, XD; Wang, GH; Li, JM; Wang, LC, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
2008
会议名称9th International Conference on Solid-State and Integrated-Circuit Technology
会议录名称2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY
页码VOLS 1-4: 1051-1053
会议日期OCT 20-23, 2008
会议地点Beijing, PEOPLES R CHINA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN978-1-4244-2185-5
部门归属[wang, liangchen; yi, xiaoyan; wang, xiaodong; wang, guohong; li, jinmin] chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要In this paper fabrication of high power light emitting diodes (LEDs) with combined transparent electrodes on both P-GaN and N-GaN have been demonstrated. Simulation and experimental results show that comparing with traditional metal N electrodes the efficacy of LEDs with transparent N electrode is increased by more than 10% and it is easier in process than the other techniques. Further more, combining the transparent electrodes with dielectric anti-reflection film, the extraction efficiency can be improved by 5%. At the same time, the transparent electrodes were protected by the dielectric film and the reliability of LEDs can be improved.
关键词Light-emitting-diodes Efficiency
学科领域半导体材料
主办者IEEE Beijing Sect.; Chinese Inst Elect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid State Circuits Soc.; IEEE Circuites & Syst Soc.; IEEE Hong Kong EDS, SSCS Chapter.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; Elect Div IEEE.; URSI Commiss D.; Inst Elect Engineers Korea.; Assoc Asia Pacific Phys Soc.; Peking Univ, IEEE EDS Student Chapter.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/8284
专题中国科学院半导体研究所(2009年前)
通讯作者Wang, LC, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Wang, LC,Yi, XY,Wang, XD,et al. Combined transparent electrodes for high power GaN-based LEDs with long life time[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-4: 1051-1053.
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