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题名: Morphology and wetting layer properties of InAs/GaAs nanostructures
作者: Zhao C;  Chen YH;  Xu B;  Tang CG;  Wang ZG
出版日期: 2009
会议日期: MAY 11-16, 2008
摘要: In this work, we present the growth of InAs rings by droplet epitaxy. A complete process from the rings formation to their density saturation has been demonstrated: A morphological evolution with the varying of the indium deposition amount has been, clearly observed. Our results indicate that there, is a critical deposition amount (similar to 1.1 ML) for the indium to form InAs dots before droplets form; there is also a critical deposition amount (similar to 1.4 ML) to form InAs ring, but it is caused by the formation of droplets as the deposition amount increases. The density of the rings saturates when the deposition amount exceeds similar to 3.3 ML; because the adsorbed indium atoms block sites for further adsorption and the following supplied In only contributes to the size increase of In droplets. Still, as the In deposition amount increases, we can find coupled quantum rings. Moreover, the wetting layer properties of these structures are studied by reflectance difference spectroscopy, which shows a complicated evolution with the In amount. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
会议名称: 5th International Conference on Semiconductor Quantum Dots
KOS主题词: atomic layer deposition
会议文集: PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhao, C;Chen, YH;Xu, B;Tang, CG;Wang, ZG.Morphology and wetting layer properties of InAs/GaAs nanostructures .见:WILEY-V C H VERLAG GMBH .PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS,PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY ,2009,VOL 6,NO 4,6 (4): 789-792
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