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题名: MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications
作者: Wang SR;  Wang W;  Zhu HL;  Zhao LJ;  Zhang RY;  Zhou F;  Shu HY;  Wang RF
发表日期: 2004
摘要: In this paper we present a novel growth of grade-strained bulk InGaAs/InP by linearly changing group-III TMGa source flow during low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE). The high-resolution X-ray diffraction (HRXRD) measurements showed that much different strain was simultaneously introduced into the fabricated bulk InGaAs/InP by utilizing this novel growth method. We experimentally demonstrated the utility and simplicity of the growth method by fabricating common laser diodes. As a first step, under the injection current of 100 mA, a more flat gain curve which has a spectral full-width at half-maximum (FWHM) of about 120 nm was achieved by using the presented growth technique. Our experimental results show that the simple and new growth method is very suitable for fabricating broad-band semiconductor optoelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang, SR; Wang, W; Zhu, HL; Zhao, LJ; Zhang, RY; Zhou, F; Shu, HY; Wang, RF .MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications ,JOURNAL OF CRYSTAL GROWTH,JAN 9 2004,260 (3-4):464-468
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