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题名: Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate
作者: Wu M;  Zhang BS;  Chen J;  Liu JP;  Shen XM;  Zhao DG;  Zhang JC;  Wang JF;  Li N;  Jin RQ;  Zhu JJ;  Yang H
发表日期: 2004
摘要: The effect of the N/Al ratio of AlN buffers on the optical and crystal quality of GaN films, grown by metalorganic chemical vapor deposition on Si(111) substrates, has been investigated. By optimizing the N/Al ratio during the AlN buffer, the threading dislocation density and the tensile stress have been decreased. High-resolution X-ray diffraction exhibited a (0002) full-width at half-maximum as low as 396 acrsec. The variations of the tensile stress existing in the GaN films were approved by the redshifts of the donor bound exiton peaks in the low-temperature photoluminescence measurement at 77 K. (C) 2003 Elsevier B.V. All rights reserved.
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wu, M; Zhang, BS; Chen, J; Liu, JP; Shen, XM; Zhao, DG; Zhang, JC; Wang, JF; Li, N; Jin, RQ; Zhu, JJ; Yang, H .Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate ,JOURNAL OF CRYSTAL GROWTH,JAN 9 2004,260 (3-4):331-335
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