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题名: Anomalous temperature dependence of photoluminescence from stoichiometric GD(2)O(3-x) film
作者: Zhou JP;  Chai CL;  Yang SY;  Liu ZK;  Song SL;  Chen NF
发表日期: 2004
摘要: A stoichiometric Gd2O3-x thin film has been grown on a silicon (10 0) substrate with a low-energy dual ion-beam epitaxial technique. Gd2O3-x shares Gd2O3 structures although there are many oxygen deficiencies in the film. The photoluminescence (PL) measurements have been performed in a temperature range 5-300 K. The detailed characters of the peak position, the full-width at half-maximum (FWHM) and the peak intensity at different temperature were reported. An anomalous intensity behavior of the PL spectra has been observed, which is similar to that of some other materials such as porous silicon and silicon nanocrystals in silicon dioxide. Therefore, we suggest that the nanoclusters with the oxygen deficiencies contribute to the PL emission and employ the model of singlet-triplet exchange splitting of exciton to discuss the four peaks observed in the experiment. (C) 2003 Elsevier B.V. All rights reserved.
KOS主题词: Photoluminescence
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhou, JP; Chai, CL; Yang, SY; Liu, ZK; Song, SL; Chen, NF .Anomalous temperature dependence of photoluminescence from stoichiometric GD(2)O(3-x) film ,JOURNAL OF CRYSTAL GROWTH,JAN 2 2004,260 (1-2):136-142
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