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题名: The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates
作者: Gong Z;  Fang ZD;  Xu XH;  Miao ZH;  Ni HQ;  Niu ZC;  Feng SL
发表日期: 2004
摘要: Self-aligned InAs quantum wires (QWRs) or three-dimensional (3D) islands are fabricated on GaAs(331)A substrates by molecular beam epitaxy (MBE). InAs QWRs are selectively grown on the step edges formed by GaAs layers. The surface morphology of InAs nanostructures is carefully investigated by atomic force microscopy (AFM) measurements. Different growth conditions, such as substrate temperature, growth approaches, and InAs coverage, exert a great effect on the morphology of InAs islands. Low substrate temperatures favour the formation of wirelike nanostructures, while high substrate temperatures favour 3D islands. The shape transition is attributed to the trade-off between surface energy and strain energy. A qualitative agreement of our experimental data with the theoretical results derived from the model proposed by Tersoff and Tromp is achieved.
KOS主题词: atomic layer deposition
刊名: JOURNAL OF PHYSICS-CONDENSED MATTER
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Gong, Z; Fang, ZD; Xu, XH; Miao, ZH; Ni, HQ; Niu, ZC; Feng, SL .The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates ,JOURNAL OF PHYSICS-CONDENSED MATTER,JAN 14 2004,16 (1):29-35
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