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题名: Photoluminescence of Te isoelectronic centers in ZnS : Te under hydrostatic pressure
作者: Fang, ZL;  Su, FH;  Ma, BS;  Ding, K;  Han, HX;  Li, GH;  Sou, IK;  Ge, WK
发表日期: 2004
摘要: The photoluminescence of four epitaxial ZnS: Te samples with Te concentration from 0.5% to 3.1% was investigated at different temperature and ambient pressure. Two well-known emission bands related to the isolated Te-1 and Te-2 pair isoelectronic centers were observed for the samples with Te concentrations of 0.5% and 0.65%. For the samples with Te concentrations of 1.4% and 3.1%, only was the Te-2-related peak observed. The pressure behaviors of these emission bands, were studied at 15 K. The Te-1 -related band has faster pressure shift to higher energy than ZnS band gap. On the other hand, the pressure coefficient of Te-2 -related bands is smaller than that of the ZnS band gap. According to a Koster-Slater model, we found that the increase of the density bandwidth of the valence band with pressure is the main reason for the faster shift of the Te-1 centers, while the relatively large difference in the pressure behavior of the Te-1 and Te-2 centers is mainly due to the difference in the pressure-induced enhancement of the impurity potential on Te-1 and Te-2 centers.
KOS主题词: Photoluminescence
刊名: JOURNAL OF INFRARED AND MILLIMETER WAVES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Fang, ZL; Su, FH; Ma, BS; Ding, K; Han, HX; Li, GH; Sou, IK; Ge, WK .Photoluminescence of Te isoelectronic centers in ZnS : Te under hydrostatic pressure ,JOURNAL OF INFRARED AND MILLIMETER WAVES,FEB 2004,23 (1):38-42
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