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题名: Luminescence emission originating from nitrogen doping of beta-Ga2O3 nanowires
作者: Song, YP;  Zhang, HZ;  Lin, C;  Zhu, YW;  Li, GH;  Yang, FH;  Yu, DP
发表日期: 2004
摘要: Nitrogen-doped beta-Ga2O3 nanowires (GaO NWs) were prepared by annealing the as-grown nanowires in an ammonia atmosphere. The optical properties of the nitrogen-doped GaO NWs were studied by measurements of the photoluminescence and phosphorescence decay at the temperature range between 10 and 300 K. The experimental results revealed that nitrogen doping in GaO NWs induced a novel intensive red-light emission around 1.67 eV, with a characteristic decay time around 136 mus at 77 K, much shorter than that of the blue emission (a decay time of 457 mus). The time decay and temperature-dependent luminescence spectra were calculated theoretically based on a donor-acceptor pair model, which is in excellent agreement with the experimental data. This result suggests that the observed novel red-light emission originates from the recombination of an electron trapped on a donor due to oxygen vacancies and a hole trapped on an acceptor due to nitrogen doping.
KOS主题词: SINGLE CRYSTALS
刊名: PHYSICAL REVIEW B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Song, YP; Zhang, HZ; Lin, C; Zhu, YW; Li, GH; Yang, FH; Yu, DP .Luminescence emission originating from nitrogen doping of beta-Ga2O3 nanowires ,PHYSICAL REVIEW B,FEB 2004,69 (7):Art.No.075304
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