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题名: Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells
作者: Bian LF;  Jiang D;  Liang XG;  Lu SL
发表日期: 2004
摘要: Photoluminescence (PL) spectra of the GaInNAs/GaAs single quantum well (SQW) with different N compositions are carefully studied in a range of temperatures and excitation power densities. The anomalous S-shape temperature dependence of the PL peak is analysed based on the competition and switching-over between the peaks related to N-induced localized states and the peak related to interband excitonic recombination. It is found that with increasing N composition, the localized energy increases and the turning point of the S-shape temperature dependence occurs at higher temperature, where the localized carriers in the bandtail states obtain enough thermal activation energy to be dissociated and delocalized. The rapid thermal annealing (RTA) effectively reduces the localized energy and causes a decrease of the switching-over temperature.
KOS主题词: atomic layer deposition
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Bian, LF; Jiang, D; Liang, XG; Lu, SL .Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells ,CHINESE PHYSICS LETTERS,MAR 2004,21 (3):548-551
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