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题名: FexSi grown with mass-analyzed low-energy dual ion beam deposition
作者: Liu LF;  Chen NF;  Zhang FQ;  Chen CL;  Li YL;  Yang SY;  Liu Z
发表日期: 2004
摘要: Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.
KOS主题词: Auger electron spectroscopy
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu, LF; Chen, NF; Zhang, FQ; Chen, CL; Li, YL; Yang, SY; Liu, Z .FexSi grown with mass-analyzed low-energy dual ion beam deposition ,JOURNAL OF CRYSTAL GROWTH,MAR 1 2004,263 (1-4):143-147
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