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题名: Mn implanted GaAs by low energy ion beam deposition
作者: Song SL;  Chen NF;  Zhou JP;  Yin ZG;  Li YL;  Yang SY;  Liu ZK
发表日期: 2004
摘要: High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved.
KOS主题词: X-ray crystallography
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Song, SL; Chen, NF; Zhou, JP; Yin, ZG; Li, YL; Yang, SY; Liu, ZK .Mn implanted GaAs by low energy ion beam deposition ,JOURNAL OF CRYSTAL GROWTH,MAR 15 2004,264 (1-3):31-35
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