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题名: Study on the perfection of in situ P-injection synthesis LEC-InP single crystals
作者: Zhou XL;  Zhao YW;  Sun NF;  Yang GY;  Xu YQ;  Sun TN
发表日期: 2004
摘要: Undoped, S-doped and Fe-doped InP crystals with diameter up to 4-inch have been pulled in drop 10 0 drop -direction under P-rich condition by a rapid P-injection in situ synthesis liquid encapsulated Czochralski (LEC) method. High speed photoluminescence mapping, etch-pit density (EPD) mapping and scanning electron microscopy have been used to characterize the samples of the single crystal ingots. Dislocations and electrical homogeneity of these samples are investigated and compared. By controlling the thermal field and the solid-liquid interface shape, 4-inch low-EPD InP single crystals have been successfully grown by the rapid P-injection synthesis LEC method. The EPD across the wafer of the ingots is less than 5 x 10(4) cm(-2). Cluster defects with a pore center are observed in the P-rich LEC grown InP ingots. These defects are distributed irregularly on a wafer and are surrounded by a high concentration of dislocations. The uniformity of the PL intensity across the wafer is influenced by these defects. (C) 2004 Elsevier B.V. All rights reserved.
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhou, XL; Zhao, YW; Sun, NF; Yang, GY; Xu, YQ; Sun, TN .Study on the perfection of in situ P-injection synthesis LEC-InP single crystals ,JOURNAL OF CRYSTAL GROWTH,MAR 15 2004,264 (1-3):17-20
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