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题名: Raman scattering of folded acoustic phonons in self-assembled Si/Ge dot superlattices
作者: Tan PH;  Bougeard D;  Abstreiter G;  Brunner K
发表日期: 2004
摘要: Self-assembled Si/Ge dot multilayers with small, uncorrelated dots fabricated by molecular beam epitaxy in the Stranski-Krastanov growth mode are studied by Raman scattering of folded longitudinal acoustic (FLA) modes. The FLA Raman spectra are analyzed and modeled with respect to mode frequencies and the spectral envelope of mode intensities. The deduced average superlattice properties are consistent with results from atomic force microscopy. The simple Rytov model used for Si/Ge layer structures reproduces very well the frequencies of the FLA modes up to 150 cm(-1). The nonlinearity of phonon dispersion curves in bulk Si for large momenta, however, becomes important for modeling the higher frequencies of observed FLA modes up to 22nd order. The effective dot layer width and an activation energy for thermal intermixing of 2.1+/-0.2 eV are determined from the spectral envelopes of FLA mode intensities of as-grown and annealed Si/Ge dot multilayers. (C) 2004 American Institute of Physics.
KOS主题词: Germanium
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Tan, PH; Bougeard, D; Abstreiter, G; Brunner, K .Raman scattering of folded acoustic phonons in self-assembled Si/Ge dot superlattices ,APPLIED PHYSICS LETTERS,APR 5 2004,84 (14):2632-2634
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