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题名: Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er
作者: Song, SF;  Chen, WD;  Zhu, JJ;  Hsu, CC
发表日期: 2004
摘要: Erbium was implanted with energies 200 or 400 keV into epitaxial (0 0 0 1) GaN grown on (0 0 0 1) Al2O3 substrate at room temperature (RT) and 400degreesC. Both random (10degrees tilt from c-axis) and channeled (along c-axis) implantations were studied. RBS/Channeling technique was used to study the dependences of the radiation damage with ion implantation energy, direction and temperature. It was found that the channeling implantation or elevating temperature implantation both resulted in the decrease of the damage. Moreover, the Photoluminscence (PL) properties of Er-implanted GaN thin filius were also studied. The experimental results indicate that the PL intensity can be enhanced by raising implantation energy or implanting along channeling direction. (C) 2004 Elsevier B.V. All rights reserved.
KOS主题词: Defects
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Song, SF; Chen, WD; Zhu, JJ; Hsu, CC .Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er ,JOURNAL OF CRYSTAL GROWTH,APR 15 2004,265 (1-2):78-82
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