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题名: Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer
作者: Zhang, CL;  Wang, ZG;  Zhao, FA;  Xu, B;  Jin, P
发表日期: 2004
摘要: InAs quantum dots (QDs) were grown On Ultra-thin In0.15Ga0.85As strained layers by molecular beam epitaxy on GaAs (00 1) substrates. Combining reflection high-energy electron diffraction, atomic force microscopy and transmission electron microscopy, we analyzed the stress field of dislocations in the strained layer/substrate interface. Specially, we revealed the relative position of QDs and dislocations. We found that the difference of the stress field around dislocations is prominent when the strained layer is ultra-thin and the stress field will directly affect the following growth. On the strained layer surface, In0.15Ga0.85As ridges will form at the inclined upside of dislocations. Then, InAs QDs will prefer nucleating on the ridges, there is relatively small stress between InAs and In0.15Ga0.85As. By selecting ultra-thin In0.15Ga0.85As layer (50 nm) and controlling the QD layer at just form QDs, we obtained ordered InAs QDs. (C) 2004 Elsevier B.V. All rights reserved.
KOS主题词: Dislocations;  Crystal dislocations
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, CL; Wang, ZG; Zhao, FA; Xu, B; Jin, P .Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer ,JOURNAL OF CRYSTAL GROWTH,APR 15 2004,265 (1-2):60-64
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