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题名: A novel extremely broadband superluminescent diode based on symmetric graded tensile-strained bulk InGaAs
作者: Wang, SR;  Wang, W;  Liu, ZH;  Zhu, HL;  Zhang, RY;  Zha, LJ;  Zhou, F;  Ding, Y;  Wang, LF
发表日期: 2004
摘要: A novel broadband superluminescent diode (SLD), which has a symmetric graded tensile-strained bulk InGaAs active region, is developed. The symmetric-graded tensile-strained bulk InGaAs is achieved by changing the group III TMGa source flow only during its growth process by low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE), in which the much different tensile strain is introduced simultaneously. At 200mA injection current, the full width at half maximum (FWHM) of the emission spectrum of the SLID can be up to 122nm, covering the range of 1508-1630nm, and the output power is 11.5mW.
刊名: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang, SR; Wang, W; Liu, ZH; Zhu, HL; Zhang, RY; Zha, LJ; Zhou, F; Ding, Y; Wang, LF .A novel extremely broadband superluminescent diode based on symmetric graded tensile-strained bulk InGaAs ,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,APR 2004,43 (4A):1330-1331
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