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题名: Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells
作者: Zhang JC;  Wang JF;  Wang YT;  Wu M;  Liu JP;  Zhu JJ;  Yang H
发表日期: 2004
摘要: InGaN/GaN multiple quantum wells (MQWs) are grown by metal-organic chemical vapour deposition on (0001) sapphire substrates. Triple-axis X-ray diffraction (TXRD) and photoluminescence (PL) spectra are used to assess the influence of trimethylgallium (TMGa) flow on structural defects, such as dislocations and interface roughness, and the optical properties of the MQWs. In this paper, a method, involving an ! scan of every satellite peak of TXRD, is presented to measure the mean dislocation density of InGaN/GaN MQWs. The experimental results show that under certain conditions which keep the trimethlyindium flow constant, dislocation density and interface roughness decrease with the increase of TMGa flow, which will improve the PL properties. It can be concluded that dislocations, especially edge dislocations, act as nonradiative recombination centres in InGaN/GaN MQWs. Also noticed is that changing the TMGa flow has more influence on edge dislocations than screw dislocations.
KOS主题词: X-ray crystallography
刊名: JOURNAL OF APPLIED CRYSTALLOGRAPHY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, JC; Wang, JF; Wang, YT; Wu, M; Liu, JP; Zhu, JJ; Yang, H .Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells ,JOURNAL OF APPLIED CRYSTALLOGRAPHY,Part 3 JUN 2004 ,37(0 ):391-394
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