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题名: Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
作者: Luo, XH;  Wang, RM;  Zhang, XP;  Zhang, HZ;  Yu, DP;  Luo, MC
发表日期: 2004
摘要: Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.
KOS主题词: Transmission electron microscopy;  Electron energy loss spectroscopy;  atomic layer deposition;  Gallium nitride;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Epitaxy;  Layer
刊名: MICRON
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Luo, XH; Wang, RM; Zhang, XP; Zhang, HZ; Yu, DP; Luo, MC .Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer ,MICRON,2004 ,35 (6):475-480
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