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题名: Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing
作者: Yi WB;  Zhang EX;  Chen M;  Li N;  Zhang GQ;  Liu ZL;  Wang X
发表日期: 2004
摘要: Separation by implantation of oxygen and nitrogen (SIMON) silicon-on-insulator (SOI) materials were fabricated by sequential oxygen and nitrogen implantation with annealing after each implantation. Analyses of SIMS, XTEM and HRTEM were performed. The results show that superior buried insulating multi-layers were well formed and the possible mechanism is discussed. The remarkable total-dose irradiation tolerance of SIMON materials was confirmed by few shifts of drain leakage current-gate source voltage (I-V) curves of PMOS transistors fabricated on SIMON materials before and after irradiation.
KOS主题词: Layers
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Yi, WB; Zhang, EX; Chen, M; Li, N; Zhang, GQ; Liu, ZL; Wang, X .Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,MAY 2004,19 (5):571-573
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