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题名: Investigations on V-defects in quaternary AlInGaN epilayers
作者: Liu JP;  Wang YT;  Yang H;  Jiang DS;  Jahn U;  Ploog KH
发表日期: 2004
摘要: The characteristics of V-defects in quaternary AlInGaN epilayers and their correlation with fluctuations of the In distribution are investigated. The geometric size of the V-defects is found to depend on the In composition of the alloy. The V-defects are nucleated within the AlInGaN layer and associated with threading dislocations. Line scan cathodoluminescence (CL) shows a redshift of the emission peak and an increase of the half width of the CL spectra as the electron beam approaches the apex of the V-defect. The total redshift decreases with decreasing In mole fraction in the alloy samples. Although the strain reduction may partially contribute to the CL redshift, indium segregation is suggested to be responsible for the V-defect formation and has a main influence on the respective optical properties. (C) 2004 American Institute Of Physics.
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu, JP; Wang, YT; Yang, H; Jiang, DS; Jahn, U; Ploog, KH .Investigations on V-defects in quaternary AlInGaN epilayers ,APPLIED PHYSICS LETTERS,JUN 28 2004,84 (26):5449-5451
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