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题名: Photovoltaic effect in a photon storage cell
作者: Bian SB;  Li GR;  Yan T;  Bing H;  Li YX;  Yang FH;  Zheng HZ
发表日期: 2004
摘要: The response of photonic memory effect in I-V characteristics of a specially designed photonic memory cell was reported. When the cell is biased in a storage mode, the optical excitation with the photon's energy larger than the energy gap gives rise to a step-like jump in the current. A set-up was used to measure the transient photocurrent at the biases where the step-like jump showed up. It is proved that the falling transient edge of the photocurrent, as the photoexcitation turns off, mainly maps the decaying of electrons and holes, which were previously stored in the cell during the illumination. Its time constant is a measure of photonic memory time.
刊名: JOURNAL OF INFRARED AND MILLIMETER WAVES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Bian, SB; Li, GR; Yan, T; Bing, H; Li, YX; Yang, FH; Zheng, HZ .Photovoltaic effect in a photon storage cell ,JOURNAL OF INFRARED AND MILLIMETER WAVES,APR 2004,23 (3):205-207
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