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题名: Luminescence properties of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer
作者: Fang, ZD;  Gong, Z;  Miao, ZH;  Xu, XH;  Ni, HQ;  Niu, ZC
发表日期: 2003
摘要: We report the photoluminescence (PL) and structural properties of self-assembled InAs/GaAs quantum dots (QDs) covered by In0.2Al0.8As and In0.2Ga0.8As combination strain-reducing layer (SRL). By introducing a thin InAlAs layer, the ground state emission wavelength redshifts, and the energy splitting between the ground and first-excited states increases to 85 meV at 10 K. The energy splitting further increases to 92 meV and the temperature dependence of full width at half maximum (FWHM) changes for QDs with different SRL after the multi-stacking. These results are attributed to the fact that the combination layer has different effects on QDs compared to the InGaAs SRL.
KOS主题词: temperature dependence;  Photoluminescence;  Separation;  WAVELENGTH;  Lasers
刊名: PHYSICS OF LOW-DIMENSIONAL STRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Fang, ZD; Gong, Z; Miao, ZH; Xu, XH; Ni, HQ; Niu, ZC .Luminescence properties of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer ,PHYSICS OF LOW-DIMENSIONAL STRUCTURES,2003 ,(1-2 ):27-33
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