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题名: Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics
作者: Peng YC;  Fu GS;  Yu W;  Li SQ;  Wang YL
发表日期: 2004
摘要: Nanocrystalline silicon (nc-Si) films were prepared by pulsed laser annealed crystallization of amorphous silicon (alpha-Si) films on SiO2-coated quartz or glass substrates. The effect of laser energy density on structural characteristics of nc-Si films was investigated. The Ni-induced crystallization of the a-Si films was also discussed. The surface morphology and microstructure of these films were characterized by scanning electron microscopy, high-resolution electron microscopy, atomic force microscopy and Raman scattering spectroscopy. The results show that not only can the alpha-Si films be crystallized by the laser annealing technique, but also the size of Si nanocrystallites can be controlled by varying the laser energy density. Their average size is about 4-6 nm. We present a surface tension and interface strain model used for describing the laser annealed crystallization of the alpha-Si films. The doping of Ni atoms may effectively reduce the threshold value of laser energy density to crystallize the alpha-Si films, and the flocculent-like Si nanostructures could be formed by Ni-induced crystallization of the alpha-Si films.
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Peng, YC; Fu, GS; Yu, W; Li, SQ; Wang, YL .Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,JUN 2004,19 (6):759-763
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