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题名: Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD
作者: Jin RQ;  Liu JP;  Zhang JC;  Yang H
发表日期: 2004
摘要: We have studied the effect of low-temperature-deposited (LT) and high-temperature-deposited (FIT) AlN interlayer with various thickness on AlGaN film grown on GaN using c-plane sapphire as substrate. All the Al0.25Ga0.75N films thicker than 1 mum with LT-AlN interlayer or with HT-AlN interlayer were free of cracks, however, their surfaces were different: the Al0.25Ga0.75N films with LT-AlN interlayer showed smooth surface, while those with HT-AlN interlayer exhibit rough surface morphology. The results of X-ray double crystal diffraction and Rutherford backscattering showed that all of the AlGaN films were under compressive strain in the parallel direction. The compressive strain resulted from the effect of interlayer-induced stress relieving and the thermal mismatch for the samples with LT-AlN interlayer, and it was due to the thermal mismatch between AlGaN and the underlying layers for those with HT-AlN interlayer. (C) 2004 Elsevier B.V. All rights reserved.
KOS主题词: biological specimen preparation
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Jin, RQ; Liu, JP; Zhang, JC; Yang, H .Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD ,JOURNAL OF CRYSTAL GROWTH,JUL 15 2004,268 (1-2):35-40
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