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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Silicon-on-insulating multi-layers for total-dose irradiation hardness
作者: Zhang EX;  Yi WB;  Liu XH;  Chen M;  Liu ZL;  Xi W
发表日期: 2004
摘要: Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal-oxide-semiconductor (PMOS) transistors and metal-semiconductor-insulator-semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3 x 10(5) rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07 V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.
KOS主题词: Implantation
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, EX; Yi, WB; Liu, XH; Chen, M; Liu, ZL; Xi, W .Silicon-on-insulating multi-layers for total-dose irradiation hardness ,CHINESE PHYSICS LETTERS,AUG 2004,21 (8):1600-1603
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