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题名: Impacts of hydrogen dilution on growth and optical properties of a-SiC : H films
作者: Hu ZH;  Liao XB;  Diao HW;  Kong GL;  Zeng XB;  Xu YY
发表日期: 2004
摘要: Hydrogenated amorphous silicon-carbon (a-SiC:H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) with a fixed methane to silane ratio ([CH4]/[SiH4]) of 1.2 and a wide range of hydrogen dilution (R-H=[H-2]/[SiH4 + CH4]) values of 12, 22, 33, 102 and 135. The impacts of RH on the structural and optical properties of the films were investigated by using UV-VIS transmission, Fourier transform infrared (FTIR) absorption, Raman scattering and photoluminescence (PL) measurements. The effects of high temperature annealing on the films were also probed. It is found that with increasing hydrogen dilution, the optical band gap increases, and the PL peak blueshifts from similar to1.43 to 1.62 eV. In annealed state, the room temperature PL peak for the low R-H samples disappears, while the PL peak for the high R-H samples appears at similar to 2.08 eV, which is attributed to nanocrystalline Si particles confined by Si-C and Si-O bonds.
刊名: SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Hu, ZH; Liao, XB; Diao, HW; Kong, GL; Zeng, XB; Xu, YY .Impacts of hydrogen dilution on growth and optical properties of a-SiC : H films ,SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE,JUN 2004,47 (3):327-334
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