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题名: Deep level defects in high temperature annealed InP
作者: Dong ZY;  Zhao YM;  Zeng YP;  Duan ML;  Lin LY
发表日期: 2004
摘要: Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level transient spectroscopy (DLTS). There is obvious difference in the deep defects between as-grown InP, InP annealed in phosphorus ambient and iron phosphide ambient, as far as their quantity and concentration are concerned. Only two defects at 0.24 and 0.64 eV can be detected in InP annealed in iron phosphide ambient, while defects at 0.24, 0.42, 0.54 and 0.64 eV have been detected in InP annealed in phosphorus ambient, in contrast to two defects at 0.49 and 0.64 eV or one defect at 0.13 eV in as-grown InP. A defect suppression phenomenon related to iron diffusion process has been observed. The formation mechanism and the nature of the defects have been discussed.
刊名: SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Dong, ZY; Zhao, YM; Zeng, YP; Duan, ML; Lin, LY .Deep level defects in high temperature annealed InP ,SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE,JUN 2004,47 (3):320-326
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