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题名: Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers
作者: Liu, JP;  Jin, RQ;  Zhang, JC;  Wang, JF;  Wu, M;  Zhu, JJ;  Zhao, DG;  Wang, YT;  Yang, H
发表日期: 2004
摘要: AlInGaN quaternary epilayers with varying In mole fraction were investigated using triple-axis x-ray diffraction and photoluminescence measurements. The indium compositional fluctuation is enhanced with increasing In mole fraction, whereas the mosaicity of the AlInGaN epilayers is determined through the GaN template quality. Based on the analysis of the temperature dependence of the PL peak position, it is found that the localization effect strengthens with increasing In mole fraction due to the larger fluctuations of the In distribution. Increasing the influence of the localized state results in increasing the emission intensity and FWHM with the In content.
KOS主题词: Light emitting diodes
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu, JP; Jin, RQ; Zhang, JC; Wang, JF; Wu, M; Zhu, JJ; Zhao, DG; Wang, YT; Yang, H .Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,AUG 7 2004,37 (15):2060-2063
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