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题名: Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy
作者: Shi GX;  Jin P;  Xu B;  Li CM;  Cui CX;  Wang YL;  Ye XL;  Wu J;  Wang ZG
发表日期: 2004
摘要: The effect of rapid thermal annealing on the InAs quantum dots (QDs) grown by atomic layer molecular beam epitaxy and capped with InGaAs layer has been investigated using transmission electron microscopy and photoluminescence (PL). Different from the previously reported results, no obvious blueshift of the PL emission of QDs is observed until the annealing temperature increases up to 800 degreesC. The size and shape of the QDs annealed at 750 degreesC have hardly changed indicating the relatively weak Ga/In interdiffusion, which is characterized by little blueshift of the PL peak of QDs. The QD size increases largely and a few large clusters can be observed after 800 degreesC RTA, implying the fast interdiffusion and the formation of InGaAs QDs. These results indicate that the delay of the blueshift of the PL peak of QDs is correlated with the abnormal interdiffusion process, which can be explained by two possible reasons: the reduction of excess-As-induced defects and the redistribution of In, Ga atoms around the InAs QDs resulted from the sub-monolayer deposition of InGaAs capping layer. (C) 2004 Elsevier B.V. All rights reserved.
KOS主题词: Photoluminescence
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Shi, GX; Jin, P; Xu, B; Li, CM; Cui, CX; Wang, YL; Ye, XL; Wu, J; Wang, ZG .Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,SEP 1 2004,269 (2-4):181-186
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